Class E Power Amplifier Thesis Statements

Publication Date

Fall 2014

Degree Type

Thesis - Campus Access Only

Degree Name

Master of Science (MS)

Department

Electrical Engineering

Advisor

Sotoudeh Hamedi-Hagh

Keywords

Bluetooth, class E, Class E Power Amplifier, LNA, low noise amplifier, RF Power Amplifier

Subject Areas

Electrical engineering

Abstract

This thesis researches the design of transceiver front-end RF amplifiers for Bluetooth applications in GPDK 45 nm CMOS technology. The target of the design was to minimize the transceiver's power consumption while achieving the best device operating performances. The design of a band-pass low noise amplifier (LNA) used for the receiver and the design of a power amplifier (PA) used for the transmitter were presented. Both amplifiers were designed in 45 nm CMOS technology with a DC supply voltage under 1.2 V to meet Bluetooth specifications at 2.45 GHz operating frequency. The LNA was designed to achieve a minimum small signal gain of at least 15 dB10 with a NF less than 2 dB10 and a reasonable input range for linearity at 1 mW operating power consumption. The PA was designed based on class E switching power amplifier configuration to achieve a minimum of 40% drain efficiency for 100 mW (Bluetooth Class 1) output power. Research on low power high performance Bluetooth device front-end RF amplifiers was conducted through studies of wireless communication modulation schemes, impedance matching networks, and trade-offs between performance parameters. In summation, this thesis searched for, explored, and analyzed possible methodologies that could be used to design RF CMOS amplifiers of Bluetooth applications.

Recommended Citation

Li, Ying Ying, "Design and Analysis of RF CMOS Power Amplifiers for Bluetooth Applications" (2014). Master's Theses. 4503.
http://scholarworks.sjsu.edu/etd_theses/4503

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